| 摘要 |
PURPOSE:To produce the titled high-quality crystal by heating and melting a polycrystal or a single crystal for generating the vapor of the group V element of the III-V compd. semiconductor in a tray structure, growing the crystal under the pressure of the generated vapor, and preventing the dissociation of the group V element from the surface of a pulled crystal. CONSTITUTION:A crystal for generating the vapor of the group V element of GaAs is charged into the tray structure 3 provided in the upper space of a crucible 2 in a crystal pulling vessel 1, when a III-V compd. semiconductor single crystal such as a GaAs crystal is produced. A polycrystal 5 as the crystal material is then charged in the crucible 2. The polycrystal 4 for generating the vapor of the group V element in the tray structure 3 is firstly melted to prepare the melt 6 for generating group V element vapor. The polycrystal 5 as the crystal material is melted under the pressure of the As vapor generated from the melt 6 to produce a crystal material melt 12, and a seed crystal 7 is lowered and then lifted to grow a pulled crystal 7 by a conventional method. Consequently, the dissociation of As from the upper surface of the crystal material melt 12 and the surface of the pulled crystal 8 is prevented, and the titled high-quality crystal can be obtained.
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