发明名称 SOLID-STATE IMAGING DEVICE
摘要 A solid-state imaging device is provided with picture elements which are each composed of a photoelectric conversion element and a MOS transistor as a switching element and which are arranged in the form of a matrix. A scanning mechanism sequentially scans the picture elements to sequentially read out photoelectric conversion signals. To eliminate smear and reduce parasitic capacitance, a high-impurity-concentration diffusion layer serving as an output terminal of the MOS transistor constituting the picture element is formed on an insulator layer for isolating the elements.
申请公布号 DE3176376(D1) 申请公布日期 1987.09.24
申请号 DE19813176376 申请日期 1981.12.21
申请人 HITACHI, LTD. 发明人 TAKEMOTO, IWAO;OHBA, SHINYA;AOKI, MASAKAZU;ANDO, HARUSHISA;NAKAI, MASAAKI;OZAKI, TOSHIFUMI;TAMURA, MASAO;MIYAO, MASANOBU
分类号 H01L27/14;H01L27/146;H01L31/14;H04N5/335;H04N5/359;H04N5/374;H04N9/07;(IPC1-7):H01L27/14 主分类号 H01L27/14
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