| 摘要 |
PURPOSE:To improve the adhesive property of an upper layer wiring as well as to upgrade the reliability of a multilayer interconnection member by a method wherein the top surface part of the upper layer wiring is flatened by forming the film thickness of the lower layer wiring and that of a first insulating film in an almost same thickness. CONSTITUTION:An insulating film 2 and a polycrystalline Si film 3 are formed on a semiconductor substrate 1 and a thermal treatment is selectively performed for forming a first insulating film (SiO2 film) 5. When a first-layer wiring 6 consisting of platinum silicide is formed on the exposed part of the polycrystalline Si film 3 using platinum, the top surface part thereof becomes nearly flat. A second insulating film 7 is formed, a connecting hole 8 is provided and a second- layer wiring 9 is selectively formed. As a result, as the top surface part of the second insulating film 7 has been almost flatened, the adhesive property of the wiring 9 is remarkably improved. |
