| 摘要 |
<p>In a semiconductor photoelectric conversion device in which a first light- transparent conductive layer for an electrode is formed on a light transparent substrate 1, a non-single-crystal semiconductor laminate member M1, M2, M3 having formed therein at least one PIN junction is formed on the first conductive layer and a second conductive layer C3, C4 for another electrode is formed on the semiconductor laminate member, the non- single-crystal semiconductor layer M1 on the side of the first conductive layer is made of SixC1-x (0<x<1), and the boundary B1 between the first conductive layer and semiconductor laminate member is formed by a first uneven surface including a number of surfaces of convexities. Further, the second conductive layer C3, C4 is reflective, and the boundary B2 between the semiconductor laminate member and the second conductive layer is formed by a second uneven surface. <IMAGE></p> |
