| 摘要 |
PURPOSE:To form an MOS type transistor, which is operated at high speed and has extremely short channel length, by shaping source-drain regions on both sides on a gate predetermined region and forming a gate electrode on the gate predetermined region. CONSTITUTION:A polycrystalline silicon thin-film and a silicon nitride film are applied onto the whole surface of a device in succession, and polycrystalline silicon thin-film regions except source-drain electrodes 305, 306 to be shaped are changed into silicon oxide layers 307. Contact regions 308, 309 for a source and a drain are formed by diffusing phosphorus atoms through the polycrystalline silicon thin-films. N-type source-drain regions 310, 311 are shaped in a silicon substrate, employing a silicon nitride film 303'' as a mask, and a thermal oxide film 312 is grown, using the silicon nitride film 303'' as a mask. Lastly, the silicon nitride film 303'' is removed, and a polycrystalline silicon gate electrode 313 is formed, thus completing an N channel MOS type transistor.
|
