| 摘要 |
PURPOSE:To prevent trouble due to variation of the characteristics of a transistor (TR) by connecting the 1st emitter area of a storage cell to the 1st emitter area of a read multiemitter TR in the same position relaton with said 1st emitter area through bit lines. CONSTITUTION:Read transistors TR11 and TR12 are multiemitter TRs; their emitters Te11 and Te12 are connected to bit lines B11 and B12, and Te21 and Te22 are connected to bit lines B21 and B22. The TRs TC1 and TC2 of the storage cell MC11 and the read TR12 are uniform in structure. Therefore, even if there is variance in manufacturing condition, a shift in the boring position of an electrode window, or variance in opening width of the electrode window to cause variation in the characteristics of the TRs, such trouble that the held information ion the storage cell is destroyed is prevented. |
