发明名称 HIGH THERMAL CONDUCTIVE SUBSTRATE
摘要 <p>PURPOSE:To remove the nonuniformity of the soldering of a semiconductor, to reduce the dispersion of thermal resistance and to improve reliability by polishing and smoothing the surface of a Cu plate joined with an AlN substrate to a specific state. CONSTITUTION:Cu plates are brought into contact and arranged to both surfaces of an AlN substrate baked through an atmosphere sintering method with ther mal conductivity of 150W/mK or more and surface roughness of 2-5mum from tough pitch electrolytic copper in the thickness of 0.1-0.2mm, and heated at 1,070 deg.C in nitrogen atmosphere, thus joining both the substrate and the Cu plates. A Cu surface is smoothed up to smoothness of 10mum or less, and the Cu plate is plated with Ni and Au in succession, and cut to a chip shape. Workability is improved extremely on barrel polishing for smoothing, and the corners and ridges of the Cu plate are rounded and the Cu plate is not broken during semiconductor assembly, thus easily inspecting the state of soldering. According ly, solder wettability is improved, and the nonuniformity of the soldering of a semiconductor at a time when the substrate is used as the one for mounting the semiconductor is eliminated, thus reducing the dispersion of thermal resis tance.</p>
申请公布号 JPS62216251(A) 申请公布日期 1987.09.22
申请号 JP19860058612 申请日期 1986.03.17
申请人 TOSHIBA CORP 发明人 SUGIURA YASUYUKI
分类号 H01L23/36;H01L23/14;H01L23/15 主分类号 H01L23/36
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