| 摘要 |
PURPOSE:To neutralize and annihilate a recombination center by adding an element, such as hydrogen, an inert gas or chlorine into a semiconductor device in which at least one part of a channel region consists of a nonsingular crystal semiconductor. CONSTITUTION:Oxygen or nitrogen is implanted onto a silicon semiconductor substrate 1 to form a silicon semiconductor film in thickness of 0.1-2mum. The surface of the silicon semiconductor film has epitaxial structure partially containing a nonsingular crystal. A field insulator 3 is shaped, a gate insulating film 12 and a contact 7 are formed, and a semiconductor film is formed onto the gate insulating film 12 through a decompression CVD method as a gate electrode 11 by a self-alignment system. A source 5 and a drain 6 are shaped by an N<+> type impurity, such as phosphorus and arsenic in 10<18>-10<21>cm<-3> when a channel forming region 4 takes a P-type. When hydrogen is added at 0.1mol%, particularly, 5-20mol%, the lifetime of carriers is increased by 10<3>-10<5> times. |
