发明名称 RESIST FOR EXPOSURE TO X-RAYS
摘要 PURPOSE:To obtain a resist for exposure to X-rays having high sensitivity, resistance to dry etching, and high definition by mixing superfine particles having high absorption coefft. for soft X-rays, with a high molecular material sensitive to X-rays. CONSTITUTION:A resist is prepd. by mixing superfine metal particles having high absorption coefft. for soft X-rays, such as Pb, Cr or Al with a high molecular material sensitive to X-rays, such as polymethyl methacrylate, polyisobutylene, etc. When the X-ray resist is irradiated with X-rays, secondary selectrons are emitted from the superfine metal particles, and the sensitivity is increased. Since the resist is superfine particle, the resistance to dry etching is improved.
申请公布号 JPS62215940(A) 申请公布日期 1987.09.22
申请号 JP19860059974 申请日期 1986.03.17
申请人 NEC CORP 发明人 SUZUKI KATSUMI
分类号 G03F7/20;G03C1/00;G03F7/004;G03F7/095 主分类号 G03F7/20
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