| 摘要 |
<p>PURPOSE:To obtain a film having less strain by securing a curve which represents a relationship between the internal stress and a cathode voltage of a sputtering grown film to a voltage for transferring from a compression stress to a tensile stress, i.e., a voltage corresponding to internal stress=0 to perform a sputtering growth. CONSTITUTION:Since a cathode voltage is most effective for a parameter for controlling the stress of sputtering grown film, when the experimental results of the cathode voltage and the internal stress are shown in a diagram with a cathode current as a parameter, it is understood that the internal stress does not depends upon the cathode current but is determined by the cathode voltage. In the diagram, there are two voltages for transferring the internal stress from the compression stress (the internal stress is at negative side) to the tensile stress (internal stress is positive side), i.e., the voltage that the internal stress=0. Since the lower voltage results from the fact that a microcrack occurs to release the stress with the result that the internal stress=0, sputtering is performed at the higher voltage. Thus, the stress of the grown film can be readily controlled to obtain the film of low stress.</p> |
