| 摘要 |
PURPOSE:To reduce the short channel effect of a compound semiconductor device by implanting atoms for forming a substrate on a boundary between a first region for a carrier passage including both polarity atoms and a substrate to prevent carrier mobility from decreasing in the first region as far as possible. CONSTITUTION:Atoms to be implanted to a boundary between a first region 1 and a substrate 5 are selected to at least one type of atoms B for forming the substrate 5, and the atoms occupy both polarity atoms A contained in the region 1 to be atoms B of the site indicating the same polarity as the region 1. Accordingly, when the atoms B of the substrate 5 are implanted to form a fourth region 4, even if the atoms B are implanted to the region 1, the atoms B become slightly rich, but do not cause carrier mobility to reduce. It is necessary to correct the displacement of the slight stoichiometry, As atoms having the same flying distance as the atoms A may be, for example, ion implanted in suitable amount. Thus, the short channel effect can be reduced. |
