| 摘要 |
PURPOSE:To form a silicon oxide film having the excellent quality of a film and a superior step coverage continuously at a low temperature by forming the silicon oxide film to which an impurity is doped by using tetraethoxysilane. CONSTITUTION:A silicon oxide film 13 is shaped onto the whole surface of a semiconductor substrate 11, to which a groove section 12 is formed, by employing tetraethoxysilane. The silicon oxide film 13 is shaped by using the tetraethoxysilane through a CVD method at a low temperature of approximately 700 deg.C or less. A silicon nitride film (Si3N4) 14 is formed onto the silicon oxide film 13 along the shape of a groove 12 in a groove section 12. A doped polycrystalline silicon film 15 and a polycrystalline silicon film 16 are shaped onto the silicon nitride film 14 or the silicon oxide film 13. Accordingly, the film can be formed continuously only by exchanging gas systems in addition to a treatment at the low temperature, thus simplifying a process. |
