| 摘要 |
PURPOSE:To form an isolation region easily by shaping a source region, a drain region and a channel forming region by a semi-amorphous semiconductor and forming the isolation region by an amorphous semiconductor. CONSTITUTION:A source region, a drain region and a channel forming region are shaped by a semi-amorphous semiconductor, and an isolation region is formed by an amorphous semiconductor. Accordingly, density at a recombination center is reduced by 1/10<2>-1/10<4> as 10<13>-10<16>cm<-3>, and electric conductivity is increased by 10<4>-10<6> times as 10<-6>-10<-4>OMEGAcm<-1>, and the semiconductor device is brought close to an ideal semiconductor, thus acquiring the value of 1-50mum under the intermediate state between 300Angstrom of AS and -10<3>mum of CS in the mobility of electrons and holes. |
