| 摘要 |
PURPOSE:To readily form an extremely narrow groove in width with good reproducibility by forming a first mask film, then forming a second mask film on the entire surface, anisotropically etching it to allow only the thin film portion to remain on the sidewall of the first mask film and remove the other, and etching an object to be etched in the pattern of the thin film portion. CONSTITUTION:A first mask film 3 having a necessary pattern is formed on an Si semiconductor layer 2 and a substrate 1, and a second mask film 4 which covers the entire surface including the first mask film is formed. The film 4 is anisotropically etched to allow a thin film portion 4A coated on the sidewall of the first mask film to remain and to remove the other. The mask 3 is removed, only the portion 4A coated on the sidewall remains, and with the portion 4A as a mask a third mask film 5 is formed. The portion 4A is removed, a hole 5A to which the pattern of the thin film portion is transferred is formed at the film 5, and an object to be etched exposed in the hole 5A is etched. Thus, a groove having very narrow width is readily formed with good reproducibility.
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