| 摘要 |
PURPOSE:To improve the characteristics of an FET by forming a recess, then coating a resist film pattern vertically from above with insulating film, further anisotropically etching it to allow the insulating film to remain on the sidewall of the recess, and coating the film vertically from above with a gate metal to suppress the expansion of the gate electrode. CONSTITUTION:An SiO2 film 16 is anisotropically etched by ion milling to remove by etching the film 16 coating the upper surfaces of a resist film pattern 14 and a recess 15 to allow the film 16 to remain n the sidewall of the recess. Then, a gate metal 17 made of aluminum is deposited from above to coat the upper surfaces of the pattern 14 and the recess 15 with the metal 17. Then, they are coated with the film 16, adn the film 16 is allowed to remain in the sidewall of the recess. Thus, even if the metal 17 is expanded laterally in the recess, it is separated by the film 15. therefore, a gate length becomes constant to reduce a parasitic capacity, thereby improving the characteristics of an FET. |
