| 摘要 |
PURPOSE:To increase an alpha-ray resistance of a field effect transistor and to reduce the additional capacity of the transistor by partially forming a reverse conductivity type semiconductor layer to a semiconductor layer for forming source. drain region and channel layer and having conductivity in contact with the semiconductor layer for forming the source. drain region. CONSTITUTION:A P-type buried layer 10, an N-type active layer 2, and N<+> type layers 5, 6 are formed by ion implantion and the follwoing high temperature heat treatment on a semi-insulating GaAs substrate 1. The ion implantion of the layer 10 may employ any of Be, Mg, C and Zn, and the implanting energy depends upon the forming conditions of the layer 2 and the layers 5, 6 to be formed near the layer 2. The dosage energy depending upon the implanting is normally selected from a range of 70kdV to 300keV so as to satisfy the completely not depleting condition, and is normally selected from a range over 10<11>cm<-2>. Thus, carrier magnifying effect at alpha-ray incident time can be suppressed to increase alpha-ray resistance. |
