| 摘要 |
PURPOSE:Not to expose a substrate at the terminal of an etching process while preventing an overetching from occuring by a method wherein a metallic oxide film to be etched is alternately irradiated with electron beams and ion beams while the metallic oxide film is decomposed into metal and oxygen by the electron beams. CONSTITUTION:A metallic oxide film 1 is irradiated with electron beams from an electron gun in the arrow A direction. At this time, the metallic oxide film 1 is decomposed into metallic atoms and oxygen atoms. Furthermore, the feeding of Argon gas to a vessel 4 is stopped to irradiate the metallic oxide film 1 with electron beams and then the metallic oxide film 1 is decomposed into the metallic atoms and the oxygen atoms to repeat the irradiation with electron beams and ion beams. On the other hand, the vessel 4 is previously provided with an Auger electron spectroscope to element-analyze the surface of a sub- strate 2 irradiated with electron beams. Through these procedures, the concentration of metallic atoms in the atmosphere of this vessel 4 can be abruptly increased since a metallic layer 12 is separated from an interface 7 so that the etching terminal of metallic oxide film 1 may be detected with high precision preventing an overetching from occuring.
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