| 摘要 |
PURPOSE:To build a low-resistance wiring provided with a thermally stable contact surface by a method wherein a wiring is built after an impurity is implanted into a high-melting metal silicide layer on a surface in contact with a semiconductor layer of one conductivity type for the creation of said type of conductivity in the semiconductor layer positioned under the contact surface. CONSTITUTION:On the surface of an interlayer insulating film 6 containing an opening, a tungsten silicide layer 7 is formed by spattering. Next, a prescribed region of the tungsten silicide layer 7 is masked by a photoresist 8, after which the tungsten silicide layer 7 positioned on an N-channel region is doped with phosphorus ions 10 driven under conditions of 100Kev, 1X10<16>cm<-2>. The tungsten silicide layer 7 is subjected to patterning for the formation of a tungsten silicide wiring, on whose surface a second interlayer insulating film 9 is formed by CVD. A heat treatment is accomplished at approximately 900 deg.C, whereby the surface is flattened of the second interlayer insulating film 9.
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