| 摘要 |
PURPOSE:To improve the growth efficiency of a crystal growing layer as well as to contrive accomplishment of high quality of a wafer by a method wherein the middle of the introducing tube, in which raw gas will be made to flow in and thermally decomposed, is constituted so as to be irradiated with light having the wavelength which gives decomposition energy to the raw gas. CONSTITUTION:Phosphine, for example, is made to flow in form a flow-in hole 6 as the first raw gas. Then, a heating furnace 7 is provided in the middle part of the introducing tube 18 which is positioned horizontally. Also, a laser beam source 20 is arranged on one side of the horizontally positioned introducing tube 18, and a laser beam is made to irradiate part of the horizontally positioned introducing tube 18. Laser irradiation light 21 of the wavelength the same as or lower than the absorption wavelength of the phosphine is used. As a result, the phosphine can be decomposed by heat into phosphorus (P2, P4 and the like) even when the heating temperature of the heating furnace 7 is lowered to 400-500 deg.C. On the other hand, trimethylindium, for example, is fed to the part directly above the surface of a wafer 2 as the second raw gas from a flow-in hole 9 through an introducing tube 10. Through these procedures, the thermally decomposed indium and phosphorus are mixed on the surface of the wafer 2, and an InP crystal growing layer is grown. As a result, the growing efficiency of the crystal growing layer can be improved.
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