| 摘要 |
PURPOSE:To improve the heat and plasma resistances of a photoresist on a wafer by short-time heating and irradiation of ultraviolet rays by irradiating ultraviolet rays on the photoresist while raising the temp. of the wafer by heating and/or irradiation of ultraviolet rays at a rate close to the rate of rising of the flow temp. of the photoresist in a state in which the temp. of the wafer is being kept slightly higher than the flow temp. CONSTITUTION:A semiconductor wafer 5 coated with a photoresist 4 is set on a wafer treating stand 6 heated to a temp. slightly higher than the flow temp. of the photoresist, that is, the heat-resisting temp., and the wafer 5 is brought into close contact with the stand 6 by evacuation through evacuating holes 7. A shutter 3 is then opened and light including ultraviolet rays generated from a high pressure mercury lamp 1 is irradiated on the photoresist 4. At the same time, electric power supplied to a heater 10 in the stand 6 is controlled to raise the temp. of the wafer 5 in a state in which the temp. is being kept slightly higher than the flow temp. After treatment is finished, the heating and irradiation of ultraviolet rays are stopped, cooling water is fed to cooling holes 11 to cool the wafer 5 and the wafer 5 is removed from the stand 6. |
