| 摘要 |
PURPOSE:To restrict a leakage current to a very small value by opposing two thin film semiconductor layers to serve as channel regions through a dielectric layer, and controlling the formation of the channels in other semiconductor layer by a field effect due to the formation of the channel in one semiconductor layer, thereby enhancing a current blocking power at reversely biasing time. CONSTITUTION:A first semiconductor thin film 12 is insularly formed on an insulating substrate 11 made of glass or the like, and a source region 13 and a drain region 14 are formed at both ends of the film. An insulating film 15 is formed on the film, a second semiconductor thin film is insularly formed on the film, and a source region 17, a drain region 18 and a channel region 16 are formed at both ends of the film. Both the regions 12, 16 are high resistance regions and impurity-undoped polycrystalline silicon layers. On the other hand, the regions 13, 14, 17, 18 are low resistance regions. When an element 1 having the region 12 and an element 2 having the region 16 are connected with a power source V with this configuration, a switch function is obtained by the mutual action between the elements 1 and 2. thus, a voltage applied between the source and the drain when the element is OFF is uniformly distributed on the entire channel region of the high resistance state to be presented. |
