| 摘要 |
PURPOSE:To stably form an FET having high performance by annealing to activate a substrate active layer formed by I/I continuously at 800-900 deg.C after crystal growing to alleviate the formation of a high resistance layer. CONSTITUTION:An N<+> type GaAs layer 6 is formed by a selective MOCVD. A growing method employs TMG((ICH3)3) and AsH3 as source gases, H2 as carrier gas, and H2Se as dopant at desired temperature. After an MOCVD N<+> type GaAs layer is grown in the AsH3 and H2 atmosphere (so-called capless annealing) at 800-900 deg.C to active an I/I layer. Thereafter, after AuGe/Ni are deposited by a lift-off method heretofore used generally for source and drain regions, they are alloyed to form the ohmic contact of the source and the drain. When III-V compoud semiconductor is selectively formed on the source, drain electrodes of an FET on a semiconductor substrate, a high resistance layer which is feasibly formed on a boundary of the substrate active layer and the selectively epitaxial layer is eliminated to stably form a high performance element. |
