| 摘要 |
PURPOSE:To eliminate the generation of blister due to gas in the interlayer film and an improper wiring in a multilayer interconnection structure by a method wherein an Al interconnection of second layer, part of which crosses over the bent part of an Al interconnection of first layer, is formed and arranged into and at such a form and a position as to have a venting space. CONSTITUTION:An Al interconnection 3 of first layer has a pattern having a bent part 8 partially and an Al interconnection 7 of second layer is arranged in such a way that part of the wiring layer 7 passes through over the bent part 8 of the Al interconnection of first layer. Even in case gas is generated in the interlayer film in the vicinity of the bent part 8 of the Al interconnection of first layer, the gas can be easily expeled outside as shown by an arrow (y) because the width of the Al interconnection of second layer is narrow, neither cracks nor pinholes are generated in the interlayer film and no blister is generated in the Al interconnection of second layer. Thereby, leakage and short-circuit due to defects are eliminated between the Al interconnection of first layer and that of second layer.
|
