发明名称 SEMICONDUCTOR MEMORY
摘要 PURPOSE:To prevent destruction of content of information by connecting a capacitor between collectors of a couple of emitter coupling transistors (TRs) constituting a memory cell. CONSTITUTION:Suppose that a TR Q1 is turned off, a TR Q2 is turned on and Schottky diodes SBD1, SBD2 have a high and a low impedance respectively. When the word line WT is transited to selection, since a terminal P1 is at a high impedance, the tracing to the word line WT is delayed and high speed tracing is tried at a terminal P2 because of its low impedance. Since both the terminals are coupled by a capacitor C, the tracing speed of the terminal P2 is suppressed by the storage electric charge and the potential difference is hardly decreased. Thus, in this state, even if a noise by alpha ray or the like is inputted, the memory inversion hardly takes place, noise margin is improved and the stability of the holding of the information content is increased. The capacitor C is replaced by a diode connected in reverse direction.
申请公布号 JPS62214592(A) 申请公布日期 1987.09.21
申请号 JP19860054933 申请日期 1986.03.14
申请人 NEC CORP 发明人 SUZUKI MASAO
分类号 H03K3/286;G11C11/40;G11C11/41;G11C11/411 主分类号 H03K3/286
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