发明名称 PHOTOCHEMICAL SEMICONDUCTOR DEVICE
摘要 PURPOSE:To obtain a photochemical semiconductor device easily generating hydrogen which is a high energy clean fuel from an aqueous alcohol soln. by joining n-type TiO2 to p-type Si. CONSTITUTION:A photochemical semiconductor device is composed of n-type TiO2 and p-type Si joined to each other. The device is produced by applying a metal such as Ag paste or an In-Ga alloy to an n-type TiO2 plate and a p-type Si plate and joining the plates to each other with the metal (or alloy) in-between. When the photochemical semiconductor device is immersed in an aqueous alcohol soln. and irradiated with light, hydrogen is generated.
申请公布号 JPS62214193(A) 申请公布日期 1987.09.19
申请号 JP19860057842 申请日期 1986.03.14
申请人 AGENCY OF IND SCIENCE & TECHNOL 发明人 TAODA HIROSHI;MINOWA SUSUMU;HAYAKAWA KIYOSHI;YAMAKITA HIROMI;TAZAWA MASATO
分类号 C01B3/04;C01B3/06;C25B1/04;C25B5/00;C25B11/02;C25B11/06;H01M8/06 主分类号 C01B3/04
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