发明名称 |
PHOTOCHEMICAL SEMICONDUCTOR DEVICE |
摘要 |
PURPOSE:To obtain a photochemical semiconductor device easily generating hydrogen which is a high energy clean fuel from an aqueous alcohol soln. by joining n-type TiO2 to p-type Si. CONSTITUTION:A photochemical semiconductor device is composed of n-type TiO2 and p-type Si joined to each other. The device is produced by applying a metal such as Ag paste or an In-Ga alloy to an n-type TiO2 plate and a p-type Si plate and joining the plates to each other with the metal (or alloy) in-between. When the photochemical semiconductor device is immersed in an aqueous alcohol soln. and irradiated with light, hydrogen is generated. |
申请公布号 |
JPS62214193(A) |
申请公布日期 |
1987.09.19 |
申请号 |
JP19860057842 |
申请日期 |
1986.03.14 |
申请人 |
AGENCY OF IND SCIENCE & TECHNOL |
发明人 |
TAODA HIROSHI;MINOWA SUSUMU;HAYAKAWA KIYOSHI;YAMAKITA HIROMI;TAZAWA MASATO |
分类号 |
C01B3/04;C01B3/06;C25B1/04;C25B5/00;C25B11/02;C25B11/06;H01M8/06 |
主分类号 |
C01B3/04 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|