| 摘要 |
PURPOSE:To form an amorphous carbon film at a high film forming speed by using a gaseous fluorinated hydrocarbon compd., gaseous hydrogen, heavy hydrogen or hydrocarbon and gas contg. oxygen atoms as a raw material and bringing the raw material into reaction by a high-frequency plasma CVD method. CONSTITUTION:An anode 15 and a cathode 17 are disposed to face each other in a vacuum vessel 13 and the cathode is heated by a heater 19. A substrate 11 consisting of an inorg. material such as crystalline Si, amorphous Si or quartz glass, org. material such as polyimide or polyester or metal such as Al, Mo or stainless steel is placed thereon. The gaseous fluorinated hydrocarbon compd. such as CF4, C2F6, or C3F8 in which part or the whole of H is substd. with F, at least one kind among the hydrogen, heavy hydrogen or hydrocarbon such as CH4 and the oxygen-contg. gas such as CO2 or N2O are supplied from cylinders 45, 47, 49 into the vacuum vessel 13. A high-frequency voltage is impressed between the anode 15 and the cathode 17 by a high-frequency power source 23 to generate a glow discharge. The amorphous carbon film like diamond contg. sigma bonds at a high ratio is thus formed on the substrate 11 at a low substrate temp., small energy density and high speed.
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