| 摘要 |
PURPOSE:To improve temperature characteristics, and make highly exact measurement of acceleration possible, by providing a second cantilever on the surface of which a piezo resistor having low sensitivity to acceleration is formed, and compensating temperature characteristics of a first cantilever with the second cantilever. CONSTITUTION:On a substrate 1, an acceleration detecting cantilever 13 to detect acceleration is formed and, in its vicinity, a temperature compensating cantilever 15 to compensate temperature against a temperature variation is formed. The acceleration detecting cantilever 13 has a weight 7 on the end portion. In the region situated on the upper portion of a concavity 5 in an N-type epitaxial layer 17 formed on the substrate 1, piezo resistors 19a and 19b are formed which have high sensitivity to acceleration and have been subjected to P-type impurity diffusion. The temperature compensating cantilever 15 is formed in a region where the substrate 1 is eliminated by an etching treatment. In an N-type epitaxial layer 17 in the region, piezo resistors 19c and 19d are formed which have low sensitivity to acceleration and have been subjected to P-type impurity diffusion. |
