| 摘要 |
<p>PURPOSE:To improve reliability on usage by forming one bit or more of a memory cell, in which information related to the electrical characteristics of section except the memory cell are memorized in a nonvolatile manner, and providing a means electrically reading the information. CONSTITUTION:With the memory, an address input 1 in the X direction and an address input 2 in the Y direction are transmitted over each address buffer 3, 4, a word line 6 selected in a main memory cell array 33 is driven by an X decoder 5, and a signal appearing in the bit line is selected by a Y decoder 7-for example, only a specific bit line 8 is selected and amplified and outputted to an input/output terminal 9, thus reading the information of a desired cell 10. Writing is conducted in response to information applied to the input/output terminal 9 by the working of writing control circuits 11, 12, operating the X decoder 5 and the Y decoder 7 in the same manner on writing. Accordingly, usage in which the characteristics of an LSI are extracted completely is enabled, thus effectively improving the characteristics of the LSI.</p> |
