| 摘要 |
PURPOSE:To achieve miniaturization and simplification in manufacture and structure as the result of integration of elements, by a method wherein the signal processing of a plurality of parallel lights applying a single DFB laser is enabled by using a light-switch structure of SiO2 photowaveguide in the form of a cantilever. CONSTITUTION:A buffer layer 15 for the epitaxial growth of a GaAs layer is formed on the part of an Si substrate 1 where DFB laser is to be formed. After an N-GaAs layer 2 is formed, the following layers are formed in order; an N-AlxGa1-xAs clad layer 3, a P-GaAs active layer 4, a P-AlyGa1-yAs photowaveguide layer 5 and a P-AlzGa1-zAs layer 6 on which a periodic distributed feedback structure is formed. After that a P-AlxGa1-xAs clad layer 7 (undoped) and a P-GaAs cap layer 8 are formed, which are subjected to an etching except a stripe type region for layer oscillation, and an SiO2 insulating layer 14 is formed on the part other than the stripe region. Then an SiO2 photowaveguide layer is formed, the Si substrate 1 is subjected to an etching applying aqueous solution of KOH, etc. to remove the lower part of the photowaveguide layer, and a part of the photowaveguide layer is formed in a cantilever type. |
