| 摘要 |
PURPOSE:To enable the single peaking of the transverse mode of outgoing beams by approximately making the side end surface of an active layer perpen dicular to a hetero-interface in an indium phosphite based semiconductor laser in which a light-emitting section is formed in a means structure and a III-V mixed crystal layer mainly comprising In and P is used as the active layer. CONSTITUTION:A first InP layer 2, an active layer 3 mainly comprising In and P and a second InP layer 4 are laminated on a substrate 1 in succession, and sections up to at least the first InP layer 2 from the second InP layer 4 are etched to form a band-shaped mesa structure 6. The active laye 3 is side-etched by an etchant having an etching rate larger than the first and second InP layers 2, 4 to the active layer 3 shaped to a band form and approximately making the etching surface of said active layer 3 perpendicular to the first and second InP 2, 4 layers, thus forming a light-emitting section. Accordingly, the side end surface of the active layer in the light-emitting section is made perpendicular to a hetero-interface, thus effectively working an optical confinement effect in the transverse direction, the allowing the single peaking of the transverse mode of outgoing beams.
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