| 摘要 |
PURPOSE:To enable the reduction of the quantity of consumption of an easy- evaporative component material and to prevent substantially the nonuniformity in the composition of a growth layer by a method wherein a growth substrate and a base material are subjected to reduction treatment by a hydrogen gas plasma atmosphere in a reaction tube for epitaxial growth prior to the implementation of the epitaxial growth. CONSTITUTION:After the inside of a reaction tube 1 is evacuated to a sufficient degree of vacuum by pumps 9 and 10, hydrogen gas of a prescribed flow rate is introduced into the reaction tube 1 from a hydrogen gas supply source 6 by operating a valve 3b and a flow controller 4b, and the inside of the reaction tube 1 is kept at a prescribed degree of vacuum by operating a vacuum valve 8. Subsequently an RF power is impressed on a pair of electrodes 11a and 11b from a power source 12, and thereby a plasma discharge of hydrogen gas is generated in the reaction tube 1 located between the electrodes 11a and 11b. Thus, activated hydrogen is generated in this part, and a thin oxide layer formed on the surface of a growth substrate and a base material, or absorbed oxygen thereon, is reduced by reduction without application of heating. Since no heating is needed, the quantity of consumption of an easy-evaporative component can be reduced and the nonuniformity in the composition of a growth layer is prevented substantially by this constitution.
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