| 摘要 |
PURPOSE:To enable forming a good connection contact electrode in a minute contact hole by coating a conductive film on the surface of a semiconductor substrate after the contact hole is opened in an insulating material layer and a high melting point metal or its silicide is coated on the wall of the hole. CONSTITUTION:An SiO2 layer 2 approx. 1mum thick is deposited by CVD on the surface of an Si substrate 1 and a contact hole 5 is opened at the position where an contact electrode is to be formed. Then, a silicide layer 4 is deposited by CVD or PVD, the surface of the Si substrate in this state is RIE-treated in the atmosphere of a chloride series gas and the silicide 4 is left on the side wall of the hole. Then, an Al layer 3 approx. 1mum thick of a wiring layer is formed by sputtering. This forms the good contact electrode only by slightly increasing the number of processes and a problem such as a disconnection or the increase of a contact resistance can be solved.
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