发明名称 |
ETCHING LIQUID FOR SILICON |
摘要 |
PURPOSE:To enable etching flat surface silicon in a comparatively short time by adding polyoxyethylene alkyl ether [RO(CH2CH2O)nH] to saturated ammonia water. CONSTITUTION:An etching liquid 1 wherein polyoxyethylene alkyl ether [RO (CH2CH2O)nH] is added to saturated ammonia water is used. The polyoxyethylene alkyl ether permeates the etching liquid inside an etched groove and since the polyoxyethylene alkyl ether is perfectly dissolved in a solution, it does not remain on the etching surface of a silicon substrate 2 and no etching irregularity is made. This enables containing a flat etching surface and an etching speed is improved.
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申请公布号 |
JPS62213128(A) |
申请公布日期 |
1987.09.19 |
申请号 |
JP19860055392 |
申请日期 |
1986.03.13 |
申请人 |
MATSUSHITA ELECTRONICS CORP |
发明人 |
KITAMURA KAZUYOSHI;UEDA DAISUKE |
分类号 |
H01L21/308;H01L21/306 |
主分类号 |
H01L21/308 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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