发明名称 DEPOSITED FILM FORMING DEVICE BY PLASMA CVD METHOD
摘要 PURPOSE:To prevent the generation of abnormal discharge and to efficiently form a deposited film of uniform and good film quality on the surface of a substrate by disposing a conductor on the central axis of a cylindrical reaction vessel, and energizing the conductor, thereby forming circular concentrical magnetic lines of force. CONSTITUTION:The inside of the cylindrical reaction vessel 1 is evacuated to a vacuum and the cylindrical substrate 7 is heated and held to and at a prescribed temp. by a heater 8. A gaseous raw material is then introduced through an introducing pipe 10 into the reaction vessel 1 from a gas releasing pipe 2'a of the inside wall 2' toward the substrate surface; at the same time, the high frequency from a voltage impressing means 14 is impressed between a cathode electrode 2 and the substrate (anode electrode) 7 to generate plasma discharge. The conductor 15 is disposed on the central axis of the reaction vessel 1 and electric current is caused to flow thereto to form a spiral magnetic field along the surface of the substrate 7. The generation of the abnormal discharge between the cathode electrode 2 and an upper wall 3 or bottom wall 4 is thereby prevented and the plasma control near the substrate surface is executed. The excellent deposited film is thus formed.
申请公布号 JPS62214181(A) 申请公布日期 1987.09.19
申请号 JP19860056982 申请日期 1986.03.17
申请人 CANON INC 发明人 YOSHINO TOSHIHITO;TAKEI TETSUYA
分类号 H01L21/205;C23C16/24;C23C16/30;C23C16/50;G03G5/08;H01L31/0248 主分类号 H01L21/205
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