发明名称 PRODUCTION OF SILICON CARBIDE
摘要 PURPOSE:To obtain inexpensive SiC having good quality and wide utilization range, by firing a blend of dunite with a reducing agent, e.g. charcol char, etc., in a vacuum atmosphere or further together mixed with a reducing gas. CONSTITUTION:Dunite having the chemical composition expressed by the formula (R2 is Ca, Mg, Fe, Mn, etc.) is blended with a reducing agent, e.g. charcoal char or ferrosilicon, etc., to give 1:0.3-3.0 ratio. The resultant blend is then put in a porcelain boat, etc., and placed in a furnace. The blend is then fired in the interior of the furnace under vacuum atmosphere of <=10<-1>mmHg or vacuum atmosphere in which a reducing gas, e.g. CO2, etc., is fed into to give >=20mmHg pressure at >=1,300 deg.C. The excess C in the resultant product is then fired at 300-900 deg.C in air and removed to afford the aimed SiC.
申请公布号 JPS62212214(A) 申请公布日期 1987.09.18
申请号 JP19860056693 申请日期 1986.03.13
申请人 AGENCY OF IND SCIENCE & TECHNOL;TOHO ORIBIN KOGYO KK 发明人 SHIMOKAWA KATSUYOSHI;SEKIGUCHI ITSUMA;SUZUKI YOSHIKAZU;UEDA YOSHINOBU;NARA KAZUO;SHOJI KIYOSHI;KURIBAYASHI TAKAYUKI
分类号 C01B31/36;C30B29/36 主分类号 C01B31/36
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