| 摘要 |
<p>PURPOSE:To enable the state of contamination in a wire extending from an external connecting lead to the surface of a chip to be analyzed simply by shifting the irradiating position of an electronic beam, by cutting off a semiconductor device sealed with resin at an arbitrarily selected position and exposing the entire surface of the wire from the chip to the external connecting lead. CONSTITUTION:A semiconductor device 5 sealed with resin is cut off at an arbitrarily selected location near a wire to be tested. The device is then polished to reduce the sealing resin 1 to the close proximity to the wire 2 and the sealing resin 1 is dry tore by an ashing apparatus. While the ashed resin 1 is blown off by high-pressure air, the tearing operation is continued until the wire 2 is exposed entirely from the chip to the lead 4. The device is then set such that the surface is disposed on the upside and horizontally to an electronic beam 6 applied vertically from above, and the surface of the wire 2 is analyzed by an X-ray microanalizer. Thus, the wire 2 can be tested on distribution of contamination therein by shifting the electronic beam 6 from the chip 3 to the external connecting lead 4.</p> |
