| 摘要 |
PURPOSE:To reduce the thyristor characteristics while increasing the brightness up to around two times of the conventional one. CONSTITUTION:A P-type clad layer 2, an active layer 3, an N-type clad layer 4 and a window layer 5 are successively formed on a GaAs substrate 1. At this time, the active layer 3 shall be thick exceeding 0.5mum containing zinc exceeding 1X10<17>cm<-3>. Through these procedures, the thyristor characteristics can be reduced while increasing the brightness up to around two times of the conventional one. |
