| 摘要 |
PURPOSE:To diminish a fall of potential in forward direction without damaging a high-speed property by specifying the kind of electrode layers composing a multi-layer ohmic electrode layer and the distribution of their layer-thickness and the processing conditions for them. CONSTITUTION:This diode is a silicon substrate mainly composed of an N<-> epitaxial layer 5 and an N<+> substrate layer 6. On one side where the N<-> epitaxial layer 5 is formed, a P<+> diffusion layer 3 is formed to form a P-N junction barrier 4 with said N<-> epitaxial layer 5. An anode electrode 1 is formed on that. On another side, a multi-layer ohmic electrode 7 is fabricated by laminating Ti of 100-500Angstrom , Ni of 3,000-7,000Angstrom , and Ag of 2,000Angstrom or more in order from the N substrate layer 6 side, followed by heat treatment at 480-550 deg.C.
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