| 摘要 |
PURPOSE:To make a via-hole in a region of semiconductor element doing no damage to the characteristic impedance by a method wherein the backside of a region formed into a semiconductor element of a semiconductor substrate is made into a recession while the thickness of substrate is made thinner than the backside of microstripline forming region. CONSTITUTION:A resist film 21 is formed on the backside of a substrate 11 to etch the substrate 11 using the resist film 2 as a mask further to make a recess 17 on the back of a source electrode 15 region. Next, the film 21 is removed to form a new resist film 22 in the recess 17 forming a via-hole 18 by etching again using the film 22 as a mask. Finally, the back is coated with a gold film 16 to complete a GaAs IC. Through these procedures, a via-hole 18 can be made in a region of semiconductor element doing no damage to the characteristic impedance.
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