| 摘要 |
PURPOSE:To eliminate cracks by making an inclination angle of a deposited film at a step part gentle by subjecting the deposited conductive film to heating by irradiation with electron beam in process of deposition of the conductive film on a substrate having step parts so as to fluidize it. CONSTITUTION:In step parts on openings 6 or edges of a gate electrode 4, there are microcracks or overhangs produced because of a bad side coverage. A sample is moved to an electron beam annealing device and a film 7a of aluminum including silicon is heated by irradiation with electron beam so that it is fused for an extremely short time as about 1 microsecond or shorter. As a result, the film changes into an aluminum film 7b including silicon with overhangs or microcracks eliminated and which has a gentle inclination.
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