发明名称 METHOD FOR RECOVERING GALLIUM AND INDIUM
摘要 <p>PURPOSE:To efficiently fractionate and recover Ga and In with high purity by using a chelate resin having a formation group of specific structure and selectively adsorbing and separating the ions of Ga and In from the mixed ion soln. of heavy metals. CONSTITUTION:The chelate resin having the residual group of the N,N,N',N'- tetraphosphonomethyl-diethylene triamine expressed by the formula as a multidentate ligand is prepd. The Ga (III) ions and In (III) ions are selectively adsorbed and separated by a column method, etc., from the mixed metallic ion-contg. soln. which contains the Ga (III) ions or In (III) ions or both thereof and heavy metallic ions such as Cu, Co, Ni and Zn by using the above-mentioned chelate resin. The chelate resin has high adsorptive power and simple substances of metals such as Ga and In useful for electronic industry are efficiently recovered by the above-mentioned method.</p>
申请公布号 JPS62211332(A) 申请公布日期 1987.09.17
申请号 JP19860055781 申请日期 1986.03.12
申请人 AGENCY OF IND SCIENCE & TECHNOL 发明人 SUZUKI TOSHISHIGE;KIMURA TETSUO;YOKOYAMA TOSHIRO;MATSUNAGA HIDEYUKI
分类号 B01J20/26;B01J45/00;C01G15/00;C22B58/00 主分类号 B01J20/26
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