| 摘要 |
PURPOSE:To form a good photosensitive body by providing an intermediate layer having approximately uniform structure between an electric charge transfer layer and charge generating layer and setting the difference of the energy gaps phi of the Fermi level and valance band between said intermediate layer and the layer adjacent thereto to prescribed eV or below. CONSTITUTION:The charge transfer layer 2 consisting of a-SiC:H, etc., contg. at least one kind of C, N and O, the intermediate layer 6, an a-SiGe:H layer 3, and a surface reforming layer 4 consisting of a-SiC:H, etc., contg. C, N, O or Ge are laminated on a conductive backing substrate 1. An electric charge blocking layer 8 contg. C, N or O to prevent the carrier from the substrate 1 and to maintain the surface potential is also formed. The layer 3 generates the carrier according to irradiation of light and sets the phi between the respective layers at, for example, <=0.1eV by the intermediate layer 6 provided between the layers 2 and 3. The photosensitive body which has the excellent sensitivity in a near IR region and good electric charge holdability such as charge potential and dark attenuation as well as durability is thereby formed. |
