| 摘要 |
PURPOSE:To accelerate the operation of a bipolar transistor by forming an insulating film on the upper surface of a boron-doped polycrystalline silicon film, and then oxidizing it to prevent the upper surface of the film from being oxidized, thereby forming a base electrode of low resistance value. CONSTITUTION:A second insulating film 8 is formed in advance on a first polycrystalline semiconductor film 5 to which an impurity is implanted to become a first electrode blank. After the film 8 and the emitter forming region of the film 5 are removed to form a hole, the surface of the film 5 of the inner wall of the hole is oxidized to form a third insulating film 10. In other words, since the upper surface of the film 5 is covered with the film 8, if the first electrode is, for example, used as a base electrode, the electrode having a predetermined low resistance value can be readily formed as the purpose, and faster bipolar transistor can be accurately manufactured.
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