| 摘要 |
PURPOSE:To obtain a crystal which has a low resistivity and emits blue light at a room temperature by making the composition ratio of a group II element in the crystal less than a specific value. CONSTITUTION:In order to realize a blue light emitting device (especially LED and LD), a low resistivity and a high blue light emission intensity are essential. For that purpose, paying attention to a group II element which is an N-type donor impurity contained by ZnSxSe1-x, the relations between the group II element concentration in the crystal, the electron concentration (n), the electron mobility mu, a deep electron trapping level and further a PL spectrum at a room temperature obtained by SIMS analysis are studied. As a result, if the group II impurity concentration is predetermined within a proper range, the growth of the crystal which shows a low resistivity and blue light emission can be made to grow. In other words, the group II impurity concentration contained in ZnSxSe1-x (0<=x<=0.1) is selected to be less than 50ppm, or more preferably, less than 50ppm and not less than 1ppm. |
