| 摘要 |
PURPOSE:To improve the light emitting efficiency of a semiconductor laser by forming a primary quantum well structure in a triangular shape, extremely narrowing the width of the vertex of the triangle to form a quantum well structure also in a lateral direction to sharpen a gain curve and to reduce a threshold current. CONSTITUTION:A primary quantum well structure 2 is formed on an N-type indium phosphide substrate 1. Then, when a moirelike etching mask 3 is formed by a 2-luminous flux interference exposure method and wet etched, a specific surface is formed so that theta becomes 70 deg.32'. When it is so etched that an indium phosphide layer 22 of the uppermost layer for forming the structure 2 becomes the vertex of a triangular shape, the mean width of an indium gallium arsenide phosphide layer 21 of the lower layer becomes 100Angstrom or shorter to satisfy quantum well conditions, thereby performing a secondary quantum well structure 4. The mask 3 is removed by dissolving, and a contact layer of a P-type indium phosphide layer 5 and a P<+> type indium gallium arsenide phosphide is formed.
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