Solar cell prodn. from epitaxial polycrystalline silicon

摘要

The process consists of (a) cleaning the surface of a substrate of polycrystalline silicon with surface damaged by cutting, by degreasing in 30% sodium hydroxide at 115 deg.C; (b) depositing a 20 micron layer of epitaxiated silicon by the LPCVD technique; (d) doping with B2H6 during growth of the layer; (e) doping with POCl3 at 870 deg.C to form a N+/P union; (f) attacking the latter oxide with HF and forming Al/Ag/Pb contacts by silk screen printing; (g) attacking the former oxide in the contact zone with HF and depositing two successive layers of gold/nickel by electroless deposition; (h) depositing a tin/lead layer over nickel contacts and formation of aluminic contact.