| 摘要 |
PURPOSE:To enable ion implantation of an impurity element to be performed with high precision, by arranging elements nearly in parallel with scanning lines which are at right angles to a time axis while ion beams are scanned. CONSTITUTION:A pattern 2 is formed on a wafer 1 with a reticle, a resist film, or the like serving as a mask. The wafer 1 is arranged and fixed nearly at right angles to the advancing direction of the radiating beams. While the ion beams 3 are scanned on the scanning lines 31, 32, 33,... which are vertical to the wafer 1 being fixed, they are gradually moved in the horizontal direction, and when they reach a prescribed position, then they are scanned in the reverse direction. Repetition of these operations makes impurity element ions be implanted into the wafer 1. By adjusting a mask to arrange the pattern 2 so that the patterns 21 and 22 become nearly in parallel with the scanning lines 31, 32,... in the vertical direction of the ion beam, an element having nearly equal electrical characteristics in the same chip is manufactured.
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