| 摘要 |
PURPOSE:To facilitate laminating a laminating semiconductor substrate on a semiconductor substrate three-dimensionally and avoid development of crackings by a method wherein pads on the semiconductor substrate and exposed parts of pads corresponding to the contact holes of the laminating semiconductor substrate are fixed and connected together with pairs of conductive connecting particles. CONSTITUTION:A semiconductor substrate 21 on which at least a semiconductor device is formed and pads 22 are formed at predetermined positions on its surface and at least one laminating semiconductor substrate 6 which has contact holes 7 along its thickness direction and on which pads 2 and 3 are formed in the neighborhood including bottom parts of the contact holes 7 so as to expose at least parts of them in the bottoms of the contact holes 7 and at least a semiconductor device is formed are prepared. The pad 22 on the semiconductor substrate 21 and the exposed part of the pad 3 corresponding to the contact hole 7 of the laminating substrate 6 are fixed and laminated together with a pair of connecting particles 16 and 23. With this constitution, development of crackings caused by thermal stress can be avoided and a three-dimensional structure semiconductor device which has excellent heat radiation properties, high integrity and high reliability and facilitates multiplied functions compared to the conventional SOI structure can be obtained. |
