| 摘要 |
PURPOSE:To facilitate automatic wire-bonding and improve the efficiency of light emitting diode assembly by a method wherein Al is evaporated on a wafer and alloyed to form a wire-bonding side surface electrode and the wafer is dipped in acidic solution. CONSTITUTION:In a light emitting diode wafer manufacturing process, after a wire-bonding side Al surface electrode is formed on the wafer, the wafer is dipped in acidic solution to make the surface of the Al surface electrode rough and eliminate the mirror gloss of the wafer owing to the large crystal grain boundaries created by delicate variations of conditions in a vacuum evaporation process. Thus a light emitting diode wafer which can be applied satisfactorily to a full-automatic bonding apparatus which performs wire-bonding by recognizing the position of the surface electrode by utilizing optical reflection can be obtained. With this constitution, the wafer can be put into the assembly process regardless to the surface condition of the Al surface electrode while, with the conventional constitution, an Al electrode is removed from a wafer which has mirror gloss and re-evaporated so that the man-hours can be reduced. |
