| 摘要 |
PURPOSE:To improve the reproducibility and the yield of a semiconductor laser by composing it of only two types of 3-element or 4-element In0.49(AlGa)0.51P mixed crystal semiconductors to readily manufacture the laser. CONSTITUTION:A superlattice or quantum well structure that an In0.49Ga0.51P matched in lattice to first and second conductivity types or undoped GaAs ad In0.49Al0.51P matched in lattice to the GaAs are alternately laminated are used for optical guide layers 4, 6. As a result, the quantum well layer made only of the In0.49Ga0.51P matched in lattice with the GaAs can be obtained only by two type of 3-element mixed crystal semiconductor without using 4-element mixed crystal semiconductor. Thus, active layer, optical guide layer for forming SCH semiconductor laser of 0.6mum band can be readily formed while obtaining the degree of freedoms of selecting forbidden band width and refractive index. |
